lead-free green ds30564 rev. 4 - 2 1 of 4 MMDT2907V www.diodes.com diodes incorporated epitaxial planar die construction complementary npn type available (mmdt2222v) ultra-small surface mount package lead free by design/rohs compliant (note 1) "green" device (note 2) qualified to aec-q101 standards for high reliability features maximum ratings @ t a = 25 c unless otherwise specified mechanical data MMDT2907V dual pnp small signal surface mount transistor characteristic symbol value unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -60 v emitter-base voltage v ebo -5.0 v collector current - continuous i c -600 ma operating and storage and temperature range t j ,t stg -55 to +150 c sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0.18 all dimensions in mm c 1 b 2 e 2 c 2 e 1 b 1 a m l b c h k g d notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. new product case: sot-563, molded plastic case material: molded plastic, "green" molding compound, ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: finish matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 marking & type code information: see last page ordering information: see last page weight: 0.003 grams (approx.) thermal characteristics @ t a = 25 c unless otherwise specified characteristic symbol value unit total power dissipation (note 3) p d 150 mw thermal resistance, junction to ambient (note 3) r ja 833 c/w
ds30564 rev. 4 - 2 2 of 4 MMDT2907V www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -60 v i c = -10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -60 v i c = -10ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -10 na a v cb = -50v, i e = 0 v cb = -50v, i e = 0, t a = 125 c collector cutoff current i cex -50 na v ce = -30v, v eb(off) = -0.5v base cutoff current i bl -50 na v ce = -30v, v eb(off) = -0.5v on characteristics (note 4) dc current gain h fe 75 100 100 100 50 300 i c = -100a, v ce = -10v i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -150ma, v ce = -10v i c = -500ma, v ce = -10v collector-emitter saturation voltage v ce(sat) -0.4 -1.6 v i c = -150ma, i b = -15ma i c = -500ma, i b = -50ma base-emitter saturation voltage v be(sat) -1.3 -2.6 v i c = 150ma, i b = 15ma i c = 500ma, i b = 50ma small signal characteristics output capacitance c obo 8.0 pf v cb = -10v, f = 1.0mhz, i e = 0 input capacitance c ibo ?30pf v eb = -2.0v, f = 1.0mhz, i c = 0 current gain-bandwidth product f t 200 mhz v ce = -20v, i c = -50ma, f = 100mhz switching characteristics turn-on time t off 45 ns delay time t d 10 ns v cc = -30v, i c = -150ma, i b1 = -15ma rise time t r 40 ns turn-off time t off 100 ns new product notes: 4. short duration test pulse used to minimize self-heating effect.
ds30564 rev. 4 - 2 3 of 4 MMDT2907V www.diodes.com -50 0 50 100 150 250 200 150 50 100 0 t , ambient temperature ( c) fig. 1, derating curve - total a p,p o wer dissipati o n (mw) d c , capacitance (pf) t v , reverse volts (v) fig. 2 typical r capacitance characteristics 0 5 10 15 20 25 30 35 0 24 6 8 10 12 14 16 18 20 cobo cibo new product 0 -0.1 -0.2 -0.3 -0.6 -0.5 -0.4 -1 -10 -100 -1000 i , collector current (ma) fig. 4, collector emitter saturation voltage vs. collector current c v,c o llect o rt o emitter saturation voltage (v) ce(sat) i c i b =10 t = 150c a t = 25c a t = -50c a i base current (ma) fig. 3 typical collector saturation region b , v,c o llect o r-emitter v o ltage (v) ce -0.001 -0.01 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -0.1 -1 -10 -100 i = -1ma c i = -10ma c i = -30ma c i = -100ma c i = -300ma c
ds30564 rev. 4 - 2 4 of 4 MMDT2907V www.diodes.com 1 10 1000 100 -1 -10 -100 f , gain bandwidth product (mhz) t i , collector current (ma) fig. 7, gain bandwidth product vs. collector current c v = -5v ce -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 -0.1 -1 -10 -100 v , base emitter v o ltage (v) be(on) i , collector current (ma) fig. 6, base emitter voltage vs. collector current c v = -5v ce t = 150c a t = 25c a t = -50c a 1 10 1000 100 -1 -10 -1000 -100 h,d cc urrent gain (normalized) fe i , collector current (ma) fig. 5, dc current gain vs collector current c v = -5v ce t = 150c a t = 25c a t = -50c a new product notes: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping MMDT2907V-7 sot-563 3000/tape & reel ordering information month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key kau = product type marking code ym = date code marking y = year ex: r = 2004 m = month ex: 9 = september marking information kau ym year 2004 2005 2006 2007 2008 2009 code r st u vw (note 5)
|
